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\chapter{Outlook}

    While all of the measurements could be calibrated they can still be fine tuned.
    The found accuracy was \(\approx\) \SI{.33}{\%}.
    To gain a better accuracy would require further iterations of the calibration process.
    In the future it should also be possible to make these even more accurate, either by using a different method than the internally used polynomial of second degree.
    This calculation could be of third degree or not even a polynomial.

    The voltage distribution over the complete wafer was measured.
    Using this distribution and V\(_\text{drop}\)s behavior at different loads could then be combined with the first iteration regulation model (SWRM).
    This produced both the worst-case V\(_\text{drop}\) range as well as a set of formulas which could be used further.
    These formulas allowed for regulating the \SI{1.8}{\volt} terminals.
    Additionally a threshold current I\(_\text{thresh}\) could be observed.
    This current limits the regulation mechanism, and results in still usable, but unregulated V\(_\text{drop}\).
    This threshold current was also predictable with the theoretical considerations.
    To further develop this mechanism, another, more complex, model (DWRM) was proposed.
    The DWRM would allow for a more accurate regulation, which is specific to a given experiment and its chosen reticles.
    This model would narrow down the worst-case scenario depicted by figures~\ref{fig:reg} and~\ref{fig:postreg}.
    For that model to work, each experiment run on a HICANN wafer, would require a simulation of the distribution of voltage between the used reticles.
    This would minimize the maximum difference in voltage drop considerably.

    Furthermore the observed current threshold of \SI{81.3}{\ampere} is restricted by a internally used resistor value. 
    If the minimum resistance of the \SI{1.8}{\volt} generating circuit were to be decreased, the threshold would increase.

    There are also external effects wich were not covered in this thesis.
    One of those is that all systems are subject to temperature changes and therefore might not be stable or noisy.
    Investigating this dependency would also allow for possible regulation mechanisms to compensate for changes in temperature.

    Running a calibrated and regulating PowerIt inside a HICANN wafer system, would be the next step in testing the regulation mechanism.
    The now regulated voltages could be resulting in more stable experiments.
    It would also be feasable to now test the influence of different voltages on the wafers neuromorphic chips and their calculations.
    Additionally to run an experiment on a HICANN wafer, a calibration is needed, and could also be influenced by the now regulated \SI{1.8}{\volt} voltages.

    